2007. 5. 21 1/3 semiconductor technical data kta1659/a epitaxial planar pnp transistor revision no : 1 high voltage application. features high transition frequency : f t =100mhz(typ.). complementary to ktc4370/a. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) note : h fe classification o:70~140, y:120~240 characteristic symbol rating unit collector-base voltage kta1659 v cbo -160 v KTA1659A -180 collector-emitter voltage kta1659 v ceo -160 v KTA1659A -180 emitter-base voltage v ebo -5 v collector current i c -1.5 a base current i b -0.15 a collector power dissipation (tc=25 ) p c 20 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-160v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage kta1659 v (br)ceo i c =-10ma, i b =0 -160 - - v KTA1659A -180 - - dc current gain h fe (note) v ce =-5v, i c =-100ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.5 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-10v, i c =-100ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 30 - pf
2007. 5. 21 2/3 revision no : 1 kta1659/a i - v cce ce collector-emitter voltage v (v) 0-4 -20 -2.0 c 0 collector current i (ma) -0.4 h - i fe c c collector current i (ma) -10 -3 fe dc current gain h collector-emitter saturation ce(sat) -0.03 -300 -100 -10 collector current i (ma) c c ce(sat) v - i collector current i (ma) 0 c -0.2 0 base-emitter voltage v (v) be be c i - v dc current gain h fe collector current i (ma) c c fe h - i -8 -12 -16 -1.2 -1.6 -0.8 common emitter ta=25 c i =0ma b common emitter v =-5v ce ta=100 c ta=25 c ta= 0 c -100 -30 -300 -1k -2k common emitter ta=25 c v =-2v ce voltage v (v) -5 -30 -1k -3k -0.05 - 0.1 - 0.3 -0.5 -1.0 common emitter ta=25 c i /i =10 c b b c i /i =5 -1 -2 -3 -5 -12 -30 -80 -140 -250 100 5 10 30 50 300 500 v =-5v ce v =-10v ce common emitter -3 5 10 30 100 50 -10 -100 -30 -300 300 500 tc=25 c -1k -2k v =-5v v =-10v ce ce ta=100 c ta=25 c ta= 0 c collector current i (ma) common emitter voltage v (v) collector-emitter saturation -5 -10 ce(sat) i /i =10 ta=1 00 c -300 -100 -30 c -1k -3k v - i ce(sat) c -0.1 -0.05 -0.3 -0.5 -1.0 -3.0 -5.0 25 0 cb -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -200 -400 -600 -800 -1k -1.2k -1.4k -1.6k
2007. 5. 21 3/3 revision no : 1 kta1659/a c - v cb collector-base voltage v (v) ob 1 collector output capacitance ob cb c (pf) 3 5 10 30 50 100 i =0 f=1mhz tc=25 c e -0.5 -1 -3 -5 -10 -30 -50 -100 -200 f - i c collector current i (ma) t transition frequency f (mhz) tc 10 30 50 100 300 500 common emitter tc=25 c v =-2v c e -2 -5 -10 -30 -50 -100 -300 -500 v =-5v ce safe operating area ce collector-emitter voltage v (v) -3 -5 -10 -30 -0.01 c collector current i (a) i max(pulsed) c * c i max v max. ceo -100 -300 -50 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * (continuous) dc operation * 500ms 100ms * 10m s * * 1ms thermal limited s/b limited v max=-160v kta1659 ceo v max=-180v KTA1659A ceo ambient temperature ta ( c) collector power dissipation p (w) 0 0 pc - ta 20 40 60 80 100 5 10 15 20 140 120 160 c 25 tc=ta infinite heat sink no heat sink 1 1 2 2
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